Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

摘要

In this paper we propose a modified structure of TFET incorporatingferroelectric oxide as the complementary gate dielectric operating in negativecapacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). Theproposed device effectively combines two different mechanisms of lowering thesub threshold swing (SS) for a transistor garnering a further lowered onecompared to conventional TFET. A simple yet accurate analytical tunnel currentmodel for the proposed device is also presented here. The developed analyticalmodel demonstrates high ON current at low $V_{GS}$ and exhibits lower SS.